ADVANCED TRANSISTORS WITH THRESHOLD VOLTAGE SET DOPANT STRUCTURES
摘要
<p>An advanced transistor with threshold voltage set dopant structure includes a gate with length Lg and a well doped to have a first concentration of a dopant. A screening region is positioned between the well and the gate and has a second concentration of dopant greater than 5 x 1018 dopant atoms per cm3. A threshold voltage set region is formed by placement of a threshold voltage offset plane positioned above the screening region. The threshold voltage set region may be formed by delta doping and have a thickness between Lg/5 and Lg/1. The structure uses minimal or no halo implants to maintain channel dopant concentration at less than 5 x 1017 dopant atoms per cm3.</p>
申请公布号
WO2011163164(A1)
申请公布日期
2011.12.29
申请号
WO2011US41156
申请日期
2011.06.21
申请人
SUVOLTA, INC.;SHIFREN, LUCIAN;RANADE, PUSHKAR;SCUDDER, LANCE;THOMPSON, SCOTT, E.
发明人
SHIFREN, LUCIAN;RANADE, PUSHKAR;SCUDDER, LANCE;THOMPSON, SCOTT, E.