SPUTTERING TARGET TA SHEET AND MANUFACTURING METHOD OF THE SAME

摘要

PURPOSE: A tantalum board plank for sputtering target and a method for manufacturing thereof are provided to manufacture the tantalum board with a superior uniformity and to minimize the crystal size and grain refinement. CONSTITUTION: A manufacturing method for tantalum board plank for sputtering target comprises next steps. The cold forging and cold rolling are successively performed about the tantalum ingot, billet melted and casted processes. The recrystallization annealing is performed in 1173K ~ 1573K. An average particle diameter of crystal grain is less than 50μm. The cold forging process is performed by applying a plastic processing rate of 50 ~ 80%. The intermediate annealing is performed under recrystallization temperature of tantalum. The forging process and in-between annealing process are repeated at least two times. The in-between annealing process operates in 873K ~ 1173K. The in-between annealing process operates for 20 ~ 40 minute. The cold roll process is performed in a reduction rate of 40%.