| 摘要 |
<p>Abstract Epitaxially coated silicon wafer with <110> orientation and method for producing itAn epitaxially coated silicon wafer, comprising a plane misoriented relative to a {110} crystal plane as wafer surface, wherein the <110> direction is tilted away by the angle 0 from the normal to the wafer surface and the projection of the tilted <110> direction forms an angle 0 with the direction <- 110> in the wafer plane and 8 is given by 0 < 0 < 3° and 45° < 0 < 90° (and all symmetrically equivalent directions).Fig. 1</p> |
