HIGH-DENSITY P-DOPED QUANTUM DOT SOLAR CELL OBTAINED BY THE ACTIVE DOPING OF INP AND A PRODUCTION METHOD THEREFOR
摘要
<p>The present invention relates to a production method for a semiconductor quantum dot sensitized type of solar cell, and, more specifically, the production method of the present invention comprises: a quantum dot forming step in which a semiconductor layer containing a group 4 element and InP is formed on a substrate and then the substrate on which the semiconductor layer has been formed is subjected to a heat treatment, thereby forming n-type semiconductor quantum dots constituting group-4-element quantum dots from which the In (indium) has been removed and which have been doped with P (phosphorus).</p>
申请公布号
WO2011162433(A1)
申请公布日期
2011.12.29
申请号
WO2010KR04307
申请日期
2010.07.02
申请人
KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE;KIM, KYUNG JOONG;HONG, SEUNG HUI;PARK, JAE HEE;LEE, WOO
发明人
KIM, KYUNG JOONG;HONG, SEUNG HUI;PARK, JAE HEE;LEE, WOO