发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
<p>A manufacturing method of a semiconductor device, wherein the steps of forming source/drain regions include: defining a boundary region and forming an auxiliary layer (160), wherein the boundary region is covered by the auxiliary layer (160), and the boundary region includes a part of the width of the active region abutting an isolation region (120); using the auxiliary layer (160),the gate-stack structure and the isolation region (120) as a mask, removing a part of the thickness of the semiconductor substrate (100) within the active region to form a recess; forming semiconductor materials (182) in the recess to fill up the recess. And a semiconductor device is provided, wherein the semiconductor substrate (100) material is sandwiched between the source/drain regions and the isolation region (120) of the semiconductor device, thereby improving the reduction of leakage current.</p> |
申请公布号 |
WO2011160456(A1) |
申请公布日期 |
2011.12.29 |
申请号 |
WO2011CN71020 |
申请日期 |
2011.02.16 |
申请人 |
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OFSCIENCES;YIN, HAIZHOU;LUO, ZHIJIONG;ZHU, HUILONG |
发明人 |
YIN, HAIZHOU;LUO, ZHIJIONG;ZHU, HUILONG |
分类号 |
H01L21/8238;H01L29/78 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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