Variable resistance devices, semiconductor devices including the variable resistance devices, and methods of operating the semiconductor devices
摘要
Methods of operating semiconductor devices that include variable resistance devices include writing first data to a semiconductor device by applying a reset pulse voltage to the variable resistance device so that the variable resistance device is switched from a first resistance state to a second resistance state, and writing second data to the semiconductor device by applying a set pulse voltage to the variable resistance device so that the variable resistance device is switched from the second resistance state to the first resistance state. The reset pulse voltage is higher than the set pulse voltage, and a resistance in the second resistance state is greater than in the first resistance state
申请公布号
EP2400499(A1)
申请公布日期
2011.12.28
申请号
EP20110154227
申请日期
2011.02.11
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, YOUNG-BAE;LEE, CHANG-BUM;LEE, DONG-SOO;KIM, CHANG-JUNG;LEE, MYOUNG-JAE;CHANG, MAN;LEE, SEUNG-RYUL