发明名称 |
Light-emitting devices with improved active-region |
摘要 |
<p>A light-emitting device comprises an active-region sandwiched between an n-type layer and a p-type layer, that allows lateral carrier injection into the active-region so as to reduce heat generation in the active-region and to minimize additional forward voltage increase associated with bandgap discontinuity. In some embodiments, the active-region is a vertically displaced multiple-quantum-well (MQW) active-region. A method for fabricating the same is also provided.</p> |
申请公布号 |
EP2400564(A2) |
申请公布日期 |
2011.12.28 |
申请号 |
EP20100190342 |
申请日期 |
2010.11.08 |
申请人 |
INVENLUX CORPORATION |
发明人 |
YAN, CHUNHUI;ZHANG, JIANPING;LIU, YING;ZHAO, FANGHAI |
分类号 |
H01L33/24;H01L33/04 |
主分类号 |
H01L33/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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