发明名称 METHOD FOR SR-TI-O-BASE FILM FORMATION AND RECORDING MEDIUM
摘要 <p>A film is formed so that the atomic numbers ratio of Sr to Ti, i.e., Sr/Ti, in the film is not less than 1.2 and not more than 3. The film is then annealed in an atmosphere containing not less than 0.001% and not more than 80% of O2 at 500° C. or above. An SrO film forming step or a TiO film forming step are repeated a plurality of times so that a sequence, in which a plurality of SrO film forming steps or/and a plurality of TiO film forming steps are performed continuously, is included. When Sr is oxidized after the adsorption of Sr, O3 and H2O are used as an oxidizing agent.</p>
申请公布号 KR20110139322(A) 申请公布日期 2011.12.28
申请号 KR20117030107 申请日期 2008.09.02
申请人 TOKYO ELECTRON LIMITED;ELPIDA MEMORY, INC. 发明人 KAWANO YUMIKO;ARIMA SUSUMU;KAKIMOTO AKINOBU;HIROTA TOSHIYUKI;KIYOMURA TAKAKAZU
分类号 C23C16/40;H01L21/316;H01L21/8242;H01L27/108 主分类号 C23C16/40
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