发明名称 |
METHOD FOR SR-TI-O-BASE FILM FORMATION AND RECORDING MEDIUM |
摘要 |
<p>A film is formed so that the atomic numbers ratio of Sr to Ti, i.e., Sr/Ti, in the film is not less than 1.2 and not more than 3. The film is then annealed in an atmosphere containing not less than 0.001% and not more than 80% of O2 at 500° C. or above. An SrO film forming step or a TiO film forming step are repeated a plurality of times so that a sequence, in which a plurality of SrO film forming steps or/and a plurality of TiO film forming steps are performed continuously, is included. When Sr is oxidized after the adsorption of Sr, O3 and H2O are used as an oxidizing agent.</p> |
申请公布号 |
KR20110139322(A) |
申请公布日期 |
2011.12.28 |
申请号 |
KR20117030107 |
申请日期 |
2008.09.02 |
申请人 |
TOKYO ELECTRON LIMITED;ELPIDA MEMORY, INC. |
发明人 |
KAWANO YUMIKO;ARIMA SUSUMU;KAKIMOTO AKINOBU;HIROTA TOSHIYUKI;KIYOMURA TAKAKAZU |
分类号 |
C23C16/40;H01L21/316;H01L21/8242;H01L27/108 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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