METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS

摘要

PURPOSE: A method of manufacturing a semiconductor device and a substrate processing apparatus are provided to form a good insulating film having uniform thickness with low costs by maintaining high rate of forming a thin film in low temperature. CONSTITUTION: In a method of manufacturing a semiconductor device and a substrate processing apparatus, a Substrate is loaded in a treatment basin. At least two kinds of gases are supplied to form a layer, including an element, in the substrate. At least two kinds of gas and other gas are supplied to the treatment basin to form a thin film in the substrate. The processed substrate is unloaded from the treatment basin.