| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To enhance reliability and yield of a semiconductor apparatus having a through electrode, and to provide its manufacturing method. <P>SOLUTION: A high melting point metal layer 13 is formed on a pad electrode 12 which is formed on a semiconductor substrate 10 through a first insulating film 11. A passivation layer 14 is then formed on the surface of the semiconductor substrate 10 including the pad electrode 12 and the high melting point metal layer 13. Thereafter, a support 16 is formed through a resin layer 15, and a via hole 17 is formed to reach the pad electrode 12 from the back of the semiconductor substrate 10 followed by formation of a through electrode 20 and a wiring layer 21 connected electrically with the pad electrode 12 exposed on the bottom of the via hole 17 through a second insulating film 18. Furthermore, a solder resist layer 22 and a conductive terminal 23 are formed. Finally, the semiconductor substrate 10 is diced into semiconductor chips 10A. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
