| 摘要 |
PURPOSE: A method for manufacturing a vertical structure type light emitting diode is provided to prevent stress applied to a semiconductor layer by a nitrogen gas and a gallium seed, thereby increasing a yield and enhancing device features. CONSTITUTION: A semiconductor layer(120) is formed on a substrate(110). A p-type electrode(130) is formed on the semiconductor layer. A pattern connected from the p-type electrode to the substrate has a fixed depth. A support layer(140) is formed on the p-type electrode. The pattern is exposed by grinding the lower surface of the substrate. The substrate is separated from the semiconductor layer.
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