发明名称 Gas barrier thin film, electronic device comprising the same, and method of preparing the gas barrier thin film
摘要 A gas barrier thin film having a substrate, an anchoring layer" and an inorganic oxide layer, the anchoring layer including a silicon-containing organic-inorganic composite copolymer comprising a repeating unit of the formula €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ-(SiO) n -, a repeating unit of the formula €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ-(SiR 1 R 2 -NR 3 ) m - and at least one or a combination of repeating units of the formulas wherein at least one of R 1 , R 2 , and R 3 is independently hydrogen, R 1 , R 2 , and R 3 are each independently C 1 -C 5 alkyl, C 2 -C 5 alkenyl, C 2 -C 5 alkynyl, C 1 -C 5 alkoxyl, or C 6 -C 15 aryl, R 4 , R 5 , R 6 , and R 7 are each independently hydrogen, C 1 -C 3 alkyl, C 1 -C 3 alkoxyl, a C 3 -C 10 cycloalkyl or a C 6 -C 15 aryl, R 4 and R 5 are not simultaneously hydrogen, R 6 and R 7 are not simultaneously hydrogen, n+m+r=1, 0<n<1, 0<m<1, and 0<r<1 ,'n', 'm', and 'r' are each a molar ratio, 'r' is p, q, or p+q, and a degree of polymerization is about 1,000 to about 1,000,000.
申请公布号 EP2200106(A3) 申请公布日期 2011.12.28
申请号 EP20090178417 申请日期 2009.12.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, KWANG-HEE;PARK, JONG-JIN;BULLIARD, XAVIER;CHOI, YUN-HYUK
分类号 H01L51/52;C09D183/04;C09D183/16;H01L31/0392;H01L31/048;H01L51/00;H01L51/44 主分类号 H01L51/52
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