| 摘要 |
<p>An inductively-coupled-plasma (ICP) type plasma processing apparatus is provided. The plasma processing includes an antenna (30) which is substantially straight in a plan view of the antenna. A plasma (50) is generated for performing a plasma treatment to a substrate (2) when a high frequency current (I R ) is applied to the antenna to form an electric field in a vacuum container (4). The antenna includes two go-and-return conductors (31, 32)closely disposed to each other in an up-down direction (Z), wherein the up-down direction is perpendicular to a surface of the substrate, and the high frequency current is applied to flow in opposite directions between the two go-and-return conductors. An interval (D) is defined by a distance between the two go-and-return conductors in the up-down direction, varies in a longitudinal direction of the antenna.</p> |
