| 摘要 |
PURPOSE: A power converting device is provided to reduce the amount of currents which flow in an SBD and a JBS, thereby suppressing damage of a freewheel diode of the SBD and the JBS. CONSTITUTION: Upper and lower arms for each U, V, and W of a power converting circuit include semiconductor switching elements(Q11~Q32) like an IGBT(Insulated Gate Bipolar Transistor) element. The upper and lower arms for each U, V, and W of the power converting circuit include SBD(Schottky Barrier Diode) or JBS(Junction Barrier controlled Schottky) freewheel diodes(D11~D32). The SBD or JBS(Junction Barrier controlled Schottky) freewheel diodes are reversely connected to each semiconductor switching element in parallel. A capacitor(C1) is connected between an anode P and a cathode N of the DC side of the power converting circuit. A pair of arms are reversely connected between an anode P and a cathode N of the AC side of the capacitor.
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