| 摘要 |
PURPOSE: A light emitting diode device with a nano stick made by an electro-deposition method is provided to selectively form a nano stick on only a current spreading layer of a light emitting diode device, thereby preventing defective short-circuit due to the nano stick. CONSTITUTION: An n-type semiconductor layer(12) is formed on a substrate(11). An active layer(13) is formed on the top of the n-type semiconductor layer. A p-type semiconductor layer(14) is formed on the top of an active layer. A current spreading layer(15) is formed on the top of the p-type semiconductor layer. An n type electrode(16) is formed on one side of the top of the n-type semiconductor layer. An n type electrode(17) is formed on one side of the top of the current spreading layer.
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