| 摘要 |
<p>A silicon on insulator structure (700; 800) comprising a first silicon layer (706), an insulator layer (708), and a second silicon layer (710). The structure further comprises a semiconductor device (702) provided by the first silicon layer (706); and a heat transfer element (704; 822) passing through the insulator layer (708) and configured to transfer heat from the semiconductor device (702) to the second silicon layer (710) through the insulator (708). The heat transfer element (704; 822) is doped such that it provides a diode in reverse bias from the semiconductor device (702) to the second silicon layer (710).</p> |
