FABRICATING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A fabricating method of a semiconductor device is provided to prevent the contact resistance distribution between a phase change material and an electrode by improving the interface property of the electrode. CONSTITUTION: In a fabricating method of a semiconductor device, a first mold film(120) is formed on a semiconductor substrate(110). A first opening part(121) filling word lines(WL0,WL1) is formed in the first mold film. In said the first mold film, the first opening(121) crowding with the word line(WL0,WL1) is formed. A vertical cell diode(Dp) is formed on the word line. The vertical cell diode comprises a first semiconductor pattern(132) and a second semiconductor pattern(134). The first electrode(145) locates on the vertical cell diode. A phase change material pattern(211) is arranged in the first electrode.