| 摘要 |
<p>PURPOSE: A nonvolatile semiconductor memory device and a manufacturing method of the same are provided to stably perform an erase operation by using a conductive core pillar to a back gate. CONSTITUTION: In a nonvolatile semiconductor memory device and a manufacturing method of the same, a laminate structure(ML) is formed on the main surface(11a) of a substrate(11). The laminate structure comprises a plurality of electrode membranes(61) which are laminated in first direction and a plurality of insulating films between the electrodes. A semiconductor pipe filler(SP) passes through a laminate structure and a selection gate electrode(SG) in Z-axis. A conductive core filler(PBG) is formed inside the semiconductor pipe filler. An inter-layer insulating film is formed between the laminate structure and the election gate electrode.</p> |
