| 摘要 |
A semiconductor device of the present invention has an insulating gate type field effect transistor portion having an n-type emitter region (3) and an n<-> silicon substrate (1), which are opposed to each other sandwiching a p-type body region (2), as well as a gate electrode (5a) which is opposed to p-type body region (2) sandwiching a gate insulating film (4a), and also has a stabilizing plate (5b). This stabilizing plate (5b) is made of a conductor or a semiconductor, is opposed to n- silicon substrate (1) sandwiching an insulating film (4, 4b) for a plate, and forms together with n<-> silicon substrate (1), a capacitor. This stabilizing plate capacitor formed between stabilizing plate (5b) and n<-> silicon substrate (1) has a capacitance greater than that of the gate-drain capacitor formed between gate electrode (5a) and n<-> silicon substrate (1). <IMAGE> |
