发明名称 |
SEMICONDUCTOR DEVICE WITH A PHYSICAL STRUCTURE FOR USE IN A PHYSICAL UNCLONABLE FUNCTION |
摘要 |
The invention relates to a semiconductor device comprising a physical structure (50) for use in a physical unclonable function, wherein the physical structure (50) comprises a lead-zirconium titanate layer (25), and a silicon-comprising dielectric layer (27) deposited on the lead-zirconium-titanate layer (25), wherein the silicon-comprising dielectric layer (27) has a rough surface (SR), the physical structure (50) further comprising a conductive layer (30) provided on the rough surface (SR) of the silicon-comprising dielectric layer (27). The invention further relates to a method of manufacturing such semiconductor device. The invention also relates to a card, such as a smartcard, and to a RFID tag comprising such semiconductor device. The inventors have found that depositing of a silicon- comprising dielectric layer (27) on a lead-zirconium titanate layer (25) using vapor deposition results in a silicon-comprising dielectric layer (27) having a rough surface (SR). This rough surface (SR) can be used in a PUF to make a resistor (R) with a variable random value by depositing a conductive layer (30) on the rough surface (SR). Alternatively, the combination of both layers (25, 27) can be used in a PUF as composite dielectric to make a capacitor (C) with a variable random capacitance value. |
申请公布号 |
EP2399290(A1) |
申请公布日期 |
2011.12.28 |
申请号 |
EP20090801278 |
申请日期 |
2009.12.21 |
申请人 |
NXP B.V. |
发明人 |
ROEST, AARNOUD, LAURENS;VAN LEUKEN-PETERS, LINDA;WOLTERS, ROBERTUS, ADRIANUS, MARIA |
分类号 |
H01L23/58;G06F21/73;H01L49/02 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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