发明名称 Substrate treatment apparatus, substrate treatment method, preliminary electrode structure, measuring electrode structure, and process electrode structure
摘要 <p>Provided are a substrate treatment method, a substrate treatment apparatus, a preliminary electrode structure, and a process electrode structure. The substrate treatment method includes selecting a shape of a hole by confirming at least one of plasma characteristics and a process result based on the shape of a hole with the use of a preliminary electrode structure where holes are formed to have shapes varying with positions; selecting an optimal process position by treating a substrate with the use of a measuring electrode structure where density of the hole varies with positions; providing a process electrode structure by transferring a hole of the measuring electrode structure corresponding to the optimal process position; and compensating process nonuniformity based on positions with the use of the process electrode structure. </p>
申请公布号 EP2239759(A3) 申请公布日期 2011.12.28
申请号 EP20090014045 申请日期 2009.11.10
申请人 KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 CHANG, HONG-YOUNG;LEE, HUN-SU
分类号 H01J37/32 主分类号 H01J37/32
代理机构 代理人
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