发明名称 |
Substrate treatment apparatus, substrate treatment method, preliminary electrode structure, measuring electrode structure, and process electrode structure |
摘要 |
<p>Provided are a substrate treatment method, a substrate treatment apparatus, a preliminary electrode structure, and a process electrode structure. The substrate treatment method includes selecting a shape of a hole by confirming at least one of plasma characteristics and a process result based on the shape of a hole with the use of a preliminary electrode structure where holes are formed to have shapes varying with positions; selecting an optimal process position by treating a substrate with the use of a measuring electrode structure where density of the hole varies with positions; providing a process electrode structure by transferring a hole of the measuring electrode structure corresponding to the optimal process position; and compensating process nonuniformity based on positions with the use of the process electrode structure.
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申请公布号 |
EP2239759(A3) |
申请公布日期 |
2011.12.28 |
申请号 |
EP20090014045 |
申请日期 |
2009.11.10 |
申请人 |
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
CHANG, HONG-YOUNG;LEE, HUN-SU |
分类号 |
H01J37/32 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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