| 摘要 |
PURPOSE: A light emitting device, a light emitting device manufacturing method, a light emitting device package, and a lighting system are provided to include a fluorescent substance in a molding member, thereby changing the wavelength of light emitted from a light emitting device. CONSTITUTION: A buffer layer(20) is formed on a growth substrate(10). A first GaN based semiconductor layer(30) is formed on the buffer layer. A second GaN based semiconductor layer(40) is formed on the first GaN based semiconductor layer. A third GaN based semiconductor layer(50) is formed on the second GaN based semiconductor layer. A first nitride layer(60) including indium is formed on the third GaN based semiconductor layer. |
