发明名称 Zirconium silicon oxide films
摘要 Electronic apparatus and systems include structures having a dielectric layer containing a zirconium silicon oxide film. A zirconium silicon oxide film may be disposed in an integrated circuit, as well as in a variety of other electronic devices. Additional apparatus, systems, and methods are disclosed.
申请公布号 US8084808(B2) 申请公布日期 2011.12.27
申请号 US20080124040 申请日期 2008.05.20
申请人 AHN KIE Y.;FORBES LEONARD;MICRON TECHNOLOGY, INC. 发明人 AHN KIE Y.;FORBES LEONARD
分类号 H01L29/788 主分类号 H01L29/788
代理机构 代理人
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