发明名称 |
Zirconium silicon oxide films |
摘要 |
Electronic apparatus and systems include structures having a dielectric layer containing a zirconium silicon oxide film. A zirconium silicon oxide film may be disposed in an integrated circuit, as well as in a variety of other electronic devices. Additional apparatus, systems, and methods are disclosed. |
申请公布号 |
US8084808(B2) |
申请公布日期 |
2011.12.27 |
申请号 |
US20080124040 |
申请日期 |
2008.05.20 |
申请人 |
AHN KIE Y.;FORBES LEONARD;MICRON TECHNOLOGY, INC. |
发明人 |
AHN KIE Y.;FORBES LEONARD |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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