| 摘要 |
An electrode structure and a method for manufacturing an integrated circuit electrode includes forming a bottom electrode comprising a pipe-shaped member, filled with a conductive material such as n-doped silicon, and having a ring-shaped top surface. A disc-shaped insulating member is formed on the top of the pipe-shaped member by oxidizing the conductive fill. A layer of programmable resistance material, such as a phase change material, is deposited in contact with the top surface of the pipe-shaped member. A top electrode in contact with the layer of programmable resistance material. |
