发明名称 Piezoelectric thin film elemental device, sensor and actuator
摘要 A piezoelectric thin film element has a piezoelectric thin film on a substrate, the piezoelectric thin film has a (K1-x,Nax)NbO3thin film expressed by a compositional formula (K1-xNax)NbO3(0 <x <1) with a perovskite structure, and a ratio of an out-of-plane directional lattice constant c to an in-plane directional lattice constant a of the thin film is in a range of 0.98 &nlE;c/a &nlE;1.01.
申请公布号 US8084925(B2) 申请公布日期 2011.12.27
申请号 US20090427348 申请日期 2009.04.21
申请人 SHIBATA KENJI;OKA FUMIHITO;SUENAGA KAZUFUMI;HITACHI CABLE, LTD. 发明人 SHIBATA KENJI;OKA FUMIHITO;SUENAGA KAZUFUMI
分类号 H01L41/08 主分类号 H01L41/08
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