发明名称 |
Piezoelectric thin film elemental device, sensor and actuator |
摘要 |
A piezoelectric thin film element has a piezoelectric thin film on a substrate, the piezoelectric thin film has a (K1-x,Nax)NbO3thin film expressed by a compositional formula (K1-xNax)NbO3(0 <x <1) with a perovskite structure, and a ratio of an out-of-plane directional lattice constant c to an in-plane directional lattice constant a of the thin film is in a range of 0.98 ≦̸c/a ≦̸1.01. |
申请公布号 |
US8084925(B2) |
申请公布日期 |
2011.12.27 |
申请号 |
US20090427348 |
申请日期 |
2009.04.21 |
申请人 |
SHIBATA KENJI;OKA FUMIHITO;SUENAGA KAZUFUMI;HITACHI CABLE, LTD. |
发明人 |
SHIBATA KENJI;OKA FUMIHITO;SUENAGA KAZUFUMI |
分类号 |
H01L41/08 |
主分类号 |
H01L41/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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