| 摘要 |
A compound semiconductor device (1) includes a compound semiconductor having a stacked structure (100) of a hexagonal single crystal layer (101), a boron phosphide-based semiconductor layer (102) formed on a surface of the hexagonal single crystal layer and a compound semiconductor layer (103) disposed on the boron phosphide-based semiconductor layer, and electrodes (108, 109) disposed on the stacked structure, wherein the boron phosphide-based semiconductor layer is formed of a hexagonal crystal disposed on a surface formed of a (1.1.-2.0.) crystal face of the hexagonal single crystal layer. |
