发明名称 |
Semiconductor photodetector and radiation detecting apparatus |
摘要 |
A photodiode array PD1 comprises an n-type semiconductor substrate one face of which is an incident surface of light to be detected; a plurality of pn junction-type photosensitive regions 3 as photodiodes formed on the side of a detecting surface that is opposite to the incident surface of the semiconductor substrate; and a carrier capturing portion 12 formed between adjacent photosensitive regions 3 from among the plurality of photosensitive regions 3 on the detecting surface side of the semiconductor substrate. The carrier capturing portion 12 has one or plurality of carrier capturing regions 13 respectively including pn-junctions, arranged at intervals. Thereby can be realized a semiconductor photodetector and a radiation detecting apparatus which can favorably restrain crosstalk from occurring. |
申请公布号 |
US8084836(B2) |
申请公布日期 |
2011.12.27 |
申请号 |
US20060645800 |
申请日期 |
2006.12.27 |
申请人 |
YAMANAKA TATSUMI;SAHARA MASANORI;FUJIWARA HIDEKI;HAMAMATSU PHOTONICS K.K. |
发明人 |
YAMANAKA TATSUMI;SAHARA MASANORI;FUJIWARA HIDEKI |
分类号 |
H01L31/06 |
主分类号 |
H01L31/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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