发明名称 Method of fabricating semiconductor laser diode apparatus and semiconductor laser diode apparatus
摘要 A semiconductor laser diode apparatus capable of suppressing difficulty in handling of the semiconductor laser diode also when the width of a semiconductor laser diode portion is small is obtained. This method of fabricating a semiconductor laser diode apparatus includes steps of forming a plurality of first semiconductor laser diode portions on a first substrate at a prescribed interval in a second direction intersecting with a first direction in which cavities extend, bonding one or some of the plurality of first semiconductor laser diode portions to a second substrate, separating the one or some of the plurality of first semiconductor laser diode portions bonded to the second substrate from the first substrate; and dividing the second substrate along the second direction.
申请公布号 US8085825(B2) 申请公布日期 2011.12.27
申请号 US20080043724 申请日期 2008.03.06
申请人 HATA MASAYUKI;KUNOH YASUMITSU;BESSHO YASUYUKI;SANYO ELECTRIC CO., LTD. 发明人 HATA MASAYUKI;KUNOH YASUMITSU;BESSHO YASUYUKI
分类号 H01S3/04;H01S5/00 主分类号 H01S3/04
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