发明名称 |
Method of fabricating semiconductor laser diode apparatus and semiconductor laser diode apparatus |
摘要 |
A semiconductor laser diode apparatus capable of suppressing difficulty in handling of the semiconductor laser diode also when the width of a semiconductor laser diode portion is small is obtained. This method of fabricating a semiconductor laser diode apparatus includes steps of forming a plurality of first semiconductor laser diode portions on a first substrate at a prescribed interval in a second direction intersecting with a first direction in which cavities extend, bonding one or some of the plurality of first semiconductor laser diode portions to a second substrate, separating the one or some of the plurality of first semiconductor laser diode portions bonded to the second substrate from the first substrate; and dividing the second substrate along the second direction. |
申请公布号 |
US8085825(B2) |
申请公布日期 |
2011.12.27 |
申请号 |
US20080043724 |
申请日期 |
2008.03.06 |
申请人 |
HATA MASAYUKI;KUNOH YASUMITSU;BESSHO YASUYUKI;SANYO ELECTRIC CO., LTD. |
发明人 |
HATA MASAYUKI;KUNOH YASUMITSU;BESSHO YASUYUKI |
分类号 |
H01S3/04;H01S5/00 |
主分类号 |
H01S3/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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