发明名称 |
Method of forming replacement metal gate with borderless contact and structure thereof |
摘要 |
Embodiments of the present invention provide a method of forming borderless contact for transistor in a replacement metal gate process. The method includes forming a gate on top of a substrate and forming spacers adjacent to sidewalls of the gate; lowering height of the spacers to expose a top portion of the sidewalls of the gate; depositing an etch-stop layer covering the spacers and the upper portion of the sidewalls of the gate; making an opening at a level that is above the spacers and in the upper portion of the sidewalls to expose the gate; and replacing material of the gate from the opening with a new gate material thereby forming a replacement gate. The method further creates a via opening in an inter-level dielectric layer surrounding the gate and spacers, with the via opening exposing the etch-stop layer; removing the etch-stop layer and fill the via opening with a metal material to form borderless contact.
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申请公布号 |
US8084311(B1) |
申请公布日期 |
2011.12.27 |
申请号 |
US20100948246 |
申请日期 |
2010.11.17 |
申请人 |
HORAK DAVID V.;FAN SU CHEN;STANDAERT THEODORUS E.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HORAK DAVID V.;FAN SU CHEN;STANDAERT THEODORUS E. |
分类号 |
H01L21/338;H01L21/336 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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