| 摘要 |
A so-called transfer chamber in a semiconductor processing apparatus in which an FIMS system is secured is separated into a second chamber in which a transfer robot is disposed and a first chamber that is minute and includes a door capable of holding a cap of a pod as the FIMS system. In the second chamber, higher pressure than in the first chamber is maintained by a minute amount of nitrogen. In the first chamber, usually, a down flow of clean air is used via the FFU. When the wafer is transferred, a down flow of nitrogen is used. Thus, oxidation gas in the transfer chamber and released substances caused the FFU can be decreased. |
