| 摘要 |
PURPOSE: A power semiconductor component with a two level doping profile is provided to have a small reverse current feature. CONSTITUTION: A second conductive well-shaped area(10) is horizontally arranged around a basic object(2). The second conductive well-shaped area has a first penetrating depth into the basic object from a first main surface(6). A plurality of field rings(20) has second conductivity and a second penetration depth. A first body element(42) has a first passivation layer(32). A second body element(44) is horizontally protruded on the field rings.
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