发明名称 PLASMA APPARATUS AND PLASMA MEASURING APPARATUS
摘要 PURPOSE: A plasma device and a plasma measuring device are provided to monitor a plasma state in real time to change a processing condition, thereby producing a substrate with good quality. CONSTITUTION: A plasma chamber(100) comprises a plasma space(400) for plasma processing. A suscepter(200) is located in the plasma chamber to support a substrate. A material spray unit sprays substrate processing materials into the plasma chamber. An electrode sensor(321) measures currents in the plasma space. A plasma measuring server(500) adjusts processing conditions in the plasma chamber by plasma variables.
申请公布号 KR101098327(B1) 申请公布日期 2011.12.26
申请号 KR20100106978 申请日期 2010.10.29
申请人 WONIK IPS CO., LTD. 发明人 JOO, KWANG SUL;PARK, MUN SU;WOO, JUNG SIK;KIM, YOUNG HYO
分类号 H01L21/205;H01L21/3065;H01L21/66 主分类号 H01L21/205
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