发明名称 |
PLASMA APPARATUS AND PLASMA MEASURING APPARATUS |
摘要 |
PURPOSE: A plasma device and a plasma measuring device are provided to monitor a plasma state in real time to change a processing condition, thereby producing a substrate with good quality. CONSTITUTION: A plasma chamber(100) comprises a plasma space(400) for plasma processing. A suscepter(200) is located in the plasma chamber to support a substrate. A material spray unit sprays substrate processing materials into the plasma chamber. An electrode sensor(321) measures currents in the plasma space. A plasma measuring server(500) adjusts processing conditions in the plasma chamber by plasma variables.
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申请公布号 |
KR101098327(B1) |
申请公布日期 |
2011.12.26 |
申请号 |
KR20100106978 |
申请日期 |
2010.10.29 |
申请人 |
WONIK IPS CO., LTD. |
发明人 |
JOO, KWANG SUL;PARK, MUN SU;WOO, JUNG SIK;KIM, YOUNG HYO |
分类号 |
H01L21/205;H01L21/3065;H01L21/66 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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