发明名称 |
TENSILE AND COMPRESSIVE STRESSED MATERIALS FOR SEMICONDUCTORS |
摘要 |
A stressed film is formed on a substrate. The substrate is placed in a process zone and a plasma is formed of a process gas provided in the process zone, the process gas having silicon-containing gas and nitrogen-containing gas. A diluent gas such as nitrogen can also be added. The as-deposited stressed material can be exposed to ultraviolet radiation or electron beams to increase the stress value of the deposited material. In addition or in the alternative, a nitrogen plasma treatment can be used to increase the stress value of the material during deposition. Pulsed plasma methods to deposit stressed materials are also described. |
申请公布号 |
KR20110138296(A) |
申请公布日期 |
2011.12.26 |
申请号 |
KR20117028555 |
申请日期 |
2005.11.10 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
BALSEANU MIHAELA;JUNG, KEE BUM;HUANG LIHUA LI;XIA LI QUN;WANG RONGPING;WITTY DEREK R.;STERN LEWIS;SEAMONS MARTIN JAY;M'SAAD HICHEM;KWAN MICHAEL CHIU |
分类号 |
H01L21/205;H01L21/3065 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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