| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a combined substrate having a plurality of silicon carbide single-crystals and a method for manufacturing the same. <P>SOLUTION: The method for manufacturing the combined substrate includes the following steps. A base portion 30 is prepared which has a supporting layer 31 made of a material different from silicon carbide, and a silicon carbide layer 32 formed on the supporting layer 31. Each of first and second silicon carbide single-crystals 11, 12 is connected onto the silicon carbide layer 32 of the base portion 30. The step of connecting them includes the following steps. Each of the first and second silicon carbide single-crystals 11, 12 is arranged to face the silicon carbide layer 32. The silicon carbide layer 32 is connected to each of the first and second silicon carbide single-crystals 11, 12 by sublimating and recrystallizing, onto the first and second silicon carbide single-crystals 11, 12, the silicon carbide layer's portions respectively facing the first and second silicon carbide single-crystals 11, 12. <P>COPYRIGHT: (C)2012,JPO&INPIT |
