发明名称 |
PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURNING METHOD THEREOF |
摘要 |
A photoelectric conversion device with a novel anti-reflection structure is provided. An uneven structure is formed on a surface of a semiconductor by growth of the same or different kind of semiconductor instead of forming an anti-reflection structure by etching a surface of a semiconductor substrate or a semiconductor film. For example, a semiconductor layer including a plurality of projections is provided for a light incident plane side of the photoelectric conversion device, thereby considerably reducing surface reflection. Such a structure can be formed by a vapor deposition method; therefore, the contamination of the semiconductor is not caused.
|
申请公布号 |
US2011308582(A1) |
申请公布日期 |
2011.12.22 |
申请号 |
US201113159919 |
申请日期 |
2011.06.14 |
申请人 |
KATAISHI RIHO;NISHIDA JIRO;KURIKI KAZUTAKA;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KATAISHI RIHO;NISHIDA JIRO;KURIKI KAZUTAKA |
分类号 |
H01L31/02;H01L31/18 |
主分类号 |
H01L31/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|