发明名称 |
PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A photoelectric conversion device having a high electric generating capacity at low illuminance, in which a semiconductor layer is appropriately separated and short circuit of a side surface portion of a cell is prevented. The photoelectric conversion device includes an isolation groove formed between one first electrode and the other first electrode that is adjacent to the one first electrode; a stack including a first semiconductor layer having one conductivity type over the first electrode, a second semiconductor layer formed using an intrinsic semiconductor, and a third semiconductor layer having a conductivity type opposite to the one conductivity type; and a connection electrode connecting one first electrode and a second electrode that is in contact with a third semiconductor layer included in a stack formed over the other first electrode that is adjacent to the one first electrode. A side surface portion of the second semiconductor layer is not crystallized.
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申请公布号 |
US2011308588(A1) |
申请公布日期 |
2011.12.22 |
申请号 |
US201113159579 |
申请日期 |
2011.06.14 |
申请人 |
NISHI KAZUO;HIROSE TAKASHI;KUSUMOTO NAOTO;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
NISHI KAZUO;HIROSE TAKASHI;KUSUMOTO NAOTO |
分类号 |
H01L31/06;H01L31/0352 |
主分类号 |
H01L31/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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