METHOD FOR ACTIVE PINCH OFF OF AN OVONIC UNIFIED MEMORY ELEMENT

摘要

A method of manufacturing a phase change memory (PCM) includes forming a pinch plate layer transversely to a PCM layer that is insulated from the pinch plate layer by a dielectric layer. Biasing the pinch plate layer causes a depletion region to form in the PCM layer. During a read of the PCM in a reset or partial reset state the depletion region increases the resistance of the PCM layer significantly.