SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

The present semiconductor device has multilayer wiring, first electrodes (5) and second electrodes (10a, 10b) provided between the multilayer wiring, and two resistance variable resistance elements (22a, 22b) containing variable resistance element films (9a, 9b) that are sandwiched between the first electrodes (5) and second electrodes (10a, 10b). Either the first electrodes (5) or the second electrodes (10a, 10b) of the two variable resistance elements (22a, 22b) are integrated.