| 摘要 |
<p>Disclosed is an ultraviolet ray sensor comprising: a p-type semiconductor layer (1) which is mainly composed of a solid solution of NiO and ZnO; and a n-type semiconductor layer (2) which is mainly composed of ZnO and is bound to the p-type semiconductor layer (1) in such a state where a part of the surface of the p-type semiconductor layer (1) is exposed. A first terminal electrode (3a) that is connected to an internal electrode (4) and a second terminal electrode (3b) that is connected to the n-type semiconductor layer (2) are formed at both ends of the p-type semiconductor layer (1), respectively. The internal electrode (4) is composed of a composite oxide represented by general formula: RNiO3 or the like, containing a rare earth element (R) and Ni as the main components, and having low resistivity. The ultraviolet ray sensor can detect ultraviolet ray readily as a photovoltaic power without the need of using any peripheral circuit and without causing delamination or the like, is inexpensive, and can have a reduced size.</p> |
