| 摘要 |
<p>Disclosed are a solid-state image capture element and a digital camera that eliminate the difference between the sensitivity of one focal point detection pixel towards incident light from diagonally above to the right and the sensitivity of another focal point detection pixel towards incident light from diagonally above to the left. An OFB layer (38) and a low-concentration layer (39) are formed on a surface layer of a semiconductor substrate (29). PDs (40N, 40R, 40L), which are a component of a normal pixel (30N) and first and second focal point detection pixels (30R, 30L), are formed on a surface layer of the low-concentration layer (39). A high-concentration barrier layer (38a) positioned underneath first photoelectric conversion regions (52Ra, 52La) of the PDs (40R, 40L) is formed on the OFB layer (38). The photoelectric conversion regions of the PDs (40R, 40L) are made asymmetric and each increase their sensitivity to the incident light (IR, IL) from diagonally above to the left and right, respectively, as a result of voltage applied to the semiconductor substrate (29). The OFB layer (38) is formed before a subsurface with unevenness due to transfer electrodes, etc., is formed, which prevents a difference in sensitivity between each focal point detection pixel (30R, 30L) arising as a result of this unevenness.</p> |
