METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, with a MPS structure, capable of reducing leakage current in reverse characteristics.

SOLUTION: A semiconductor device comprises an ohmic junction part in which a semiconductor of a first conductive type and a metal layer are ohmically contacted, and a Schottky junction part in which a semiconductor of a second conductive type and the metal layer are Schottky-connected. The method of manufacturing the semiconductor device comprises: metal layer formation steps (steps S101 and S102) of forming the metal layer by thining the film thickness of the ohmic junction part in a film thickness range capable of performing ohmic junction; insulating film formation steps (steps S103 and S104) of forming an insulating film covering a part of the metal layer for protection; and a heat treatment step (step S105) of baking the insulating film and siliciding the metal layer of the ohmic junction part after the insulating film formation steps (steps S103 and S104).

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