| 摘要 |
<P>PROBLEM TO BE SOLVED: To detect crystal defects such as dislocation, stacking fault, and the like, easily and precisely. <P>SOLUTION: The defect detector comprises: XY coordinate transformation means 112 as coordinate transformation means for exciting an epitaxial growth substrate 17 where a compound semiconductor layer is grown epitaxially on a single crystal substrate by applying exciting light from above and then mapping the light emission intensity of photoluminescence over the whole epitaxial growth substrate; and defect detection means 113 for sequentially detecting defective pixels by using the difference between multiple pixels divided into coordinates by the coordinate transformation means 112 and multiple pixels adjacent thereto. <P>COPYRIGHT: (C)2012,JPO&INPIT |
