EPITAXIAL GROWTH SYSTEM AND METHOD OF MANUFACTURING EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial growth system in which an epitaxial layer formed on the rear side of a substrate is reduced.

SOLUTION: An epitaxial growth system 1 comprises: a chamber 2; a susceptor 3 arranged in the chamber and having multiple through holes on which a substrate W to be grown epitaxially is mounted; a support shaft 7 which supports the susceptor; reaction gas supply means 4 for supplying reaction gas from a reaction gas supply source to the substrate W mounted on the susceptor 3 in the chamber 2; and reaction gas exhaust means 5 for exhausting the gas after reaction to the outside of the chamber 2. A cover 91 is provided to cover the rear side of the susceptor 3.

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