| 发明名称 |
ONE-TIME PROGRAMMABLE MEMORY AND METHOD FOR MAKING THE SAME |
| 摘要 |
A one time programmable nonvolatile memory formed from metal-insulator-semiconductor cells. The cells are at the crosspoints of conductive gate lines and intersecting doped semiconductor lines formed in a semiconductor substrate. |
| 申请公布号 |
US2011309421(A1) |
申请公布日期 |
2011.12.22 |
| 申请号 |
US20100819566 |
申请日期 |
2010.06.21 |
| 申请人 |
LUAN HARRY S.;HE YUE-SONG;WONG TING-WAH |
发明人 |
LUAN HARRY S.;HE YUE-SONG;WONG TING-WAH |
| 分类号 |
H01L27/105;H01L23/525;H01L29/78 |
主分类号 |
H01L27/105 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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