| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device with a buried gate is provided to ion-implant a diffusion preventing material with carbons before a storage node contact plug is formed, thereby suppressing a dopant from being spread onto a substrate. CONSTITUTION: A landing plug(32A) is formed on a substrate(31). A contact hole exposes the landing plug. A diffusion suppressing material is ion-implanted into the landing plug. The diffusion suppressing material includes carbons. A storage node contact plug is buried in the contact hole.</p> |
