| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory system that accelerates a read/write performance. <P>SOLUTION: A memory system includes: first memories 13-1, ..., 13-n each of which is composed of a flash type EEPROM with the arrangement of a plurality of memory cells to electrically erase and write data; a second memory 14 which is constituted by one of a ferroelectric memory, a magnetoresistive memory, and a phase change memory, and has a smaller capacity and a higher writing speed compared with the first memories; a control circuit 15 for controlling the first and the second memories 13 and 14; and an interface circuit for communicating with an external part. The first memories 13 store data. The second memory 14 stores at least one information among route information, directory information, a data file name, a data file size, file allocation table information for storing a storage part of the data, and a data writing termination time, so as to store the data. <P>COPYRIGHT: (C)2012,JPO&INPIT |
