| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of reducing off-current, and in which a polycrystalline semiconductor layer having suppressed variation in characteristics is a channel region. <P>SOLUTION: A method of manufacturing a semiconductor device comprises the steps of: forming an insulator layer on a semiconductor substrate; forming a non-crystalline or polycrystalline semiconductor layer including a narrow part on the insulator layer; forming an insulator layer having a larger thermal expansion coefficient than that of the semiconductor layer, on the semiconductor layer; performing heat treatment; removing the insulator layer; forming a gate insulating film on the sides of the narrow part; forming a gate electrode on the gate insulating film; and forming a source and a drain region on the semiconductor layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
