FORMATION METHOD OF LAMINATED RESIN FILM AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method, etc. of a semiconductor device having a fine pattern with a high yield.

SOLUTION: A manufacturing method of a semiconductor device comprises: a step for forming a diffraction grating layer 7 and an insulating layer 9; a step for forming a silicon-free resin layer 11; a step for forming a periodic structure pattern 11p1; a step for forming a silicon-containing resin layer 13; a step for etching the silicon-containing resin layer 13; a step for etching the silicon-free resin layer 11 by using the silicon-containing resin layer 13 as a mask; and a step for etching the insulating layer 9 by using the silicon-free resin layer 11 as a mask. The step for forming the silicon-containing resin layer includes: a step for spin-coating a silicon-containing resin solution; a step for heating the silicon-containing resin layer 13 to a first temperature; and a step for spin-coating a rinsing solution 14 containing a volatile component on an outer edge 13e1 of the silicon-containing resin layer 13.

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