| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a group III nitride semiconductor laser element in which planarity can be enhanced in a resonator mirror while reducing the threshold current. <P>SOLUTION: While aligning the orientation of the scribe groove 65a of a substrate product SP with the extension direction of the edge 71b of a supporting device 71, the substrate product SP is installed on the supporting device 71. The substrate product SP is divided into first through third regions 70a, 70b and 70c with a reference line (X coordinate A1, B1) extending along the edge 71b as the boundary. The substrate product SP is separated by pressing the first and second regions 70a and 70b of the substrate product SP against the third region 70c while supporting the first and second regions 70a and 70b by support faces 71a and 71c, thus forming another substrate product SP1 and a laser bar LB1. A blade 69 is pressed against the substrate product at a position separated by a distance SHFT from the center line CNT between the edges 71b and 71d of the support faces 71a and 71c. <P>COPYRIGHT: (C)2012,JPO&INPIT |
