发明名称 |
CLOSED LOOP MOCVD DEPOSITION CONTROL |
摘要 |
A method and apparatus are provided for monitoring and controlling substrate processing parameters for a cluster tool that utilizes chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates within a processing chamber. A closed-loop control system performs in-situ monitoring of the Group III-nitride film growth rate and adjusts film growth parameters as required to maintain a target growth rate. In another embodiment, a closed-loop control system performs in-situ monitoring of film growth parameters for multiple processing chambers for one or more film deposition systems. |
申请公布号 |
US2011308453(A1) |
申请公布日期 |
2011.12.22 |
申请号 |
US20090812222 |
申请日期 |
2009.01.23 |
申请人 |
SU JIE;WASHINGTON LORI D.;BOUR DAVID;GRAYSON JACOB;NIJHAWAN SANDEEP;STEVENS RONALD;APPLIED MATERIALS, INC. |
发明人 |
SU JIE;WASHINGTON LORI D.;BOUR DAVID;GRAYSON JACOB;NIJHAWAN SANDEEP;STEVENS RONALD |
分类号 |
B05C11/00 |
主分类号 |
B05C11/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|